TC55VZM216AFTN12

TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55VZM216AJJN/AFTN is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface assembly. FEATURES Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns Low-power dissipation (IDDO2) (the following are maximum values) Cycle Time Operation (max) 8 140 10 130 12 120 ns mA Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control using LB (I/O1 to I/O8) and UB (I/O9 to I/O16) Package: SOJ44-P-400-1.27 (AJJN) (Weight: 1.64 g typ) TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ) Standby:4 mA (...