RJE0609JPD

Preliminary Datasheet RJE0609JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1908-0100 Rev.1.00 Apr 01, 2010 Features       Logic level operation (–6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance 100 m Max (VGS = –10 V) Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 1. Gate 2. Drain 3. Source 4. Drain G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 Current Limitation Circuit 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Note3 Body-drain diode reverse drain current IDR Avalanche current IAP Note 2 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Ratings –60 –16 2.5 –4 –4 –4 68 30 150 –55 to +15...