RJE0615JSP

Preliminary Datasheet RJE0615JSP Silicon P Channel MOS FET Series Power Switching Description R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features       Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 53 m Typ, 65 m Max (VGS = –10 V) High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 D 5 D 6 D 7 D 8 3 1 2 4 4 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Temperature Sensing Circuit Latch Circuit 1 S S 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol Ratings VDSS –60 VGSS –16 VGSS 2.5 Drain current ID Note3 –10 Body-drain diode reverse drain current IDR –10 Avalanche current IAP Note 2 –4.7 Avalanche energy EAR Note 2 94.7 Channel dissipation Pch Note 1 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1 1 Drive operation: When using the glass epoxy board (FR...