HFB50HC20

PD - 94308A HFB50HC20 FRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ultrafast, Soft Recovery Diode VR = 200V IF(AV) = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 87°C Single Pulse Forward Current, R TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 200 50 450 167 -55 to +150 Units V A W °C Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE (ISOLATED BASE) CATHODE ANODE ANODE TO-258AA www.irf.com 1 10/18/01 www.DataSheet.in HFB50HC20 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VF Cathode Anode Breakdown Voltage Forward Voltage See Fig. 1 S Min. Typ. Max. Units 200 — — — — — — — — — — — — 8.7 — 1.34 1.28 1.7 1.69 10 200 360 — µA ...