IRF7324

PD -93799A IRF7324 HEXFET® Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.018Ω 3 6 4 5 Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -9.0 -7.1 -71 2.0 1.3 16 ± 12 -55 to + 150 Units V A W W mW/°C V °C Thermal Resistance Parameter RθJA Max. Units 62.5 °C/W Maximum Junction-to-Ambient ƒ www.irf.com 1 6/26/00 www.DataSheet.in IRF7324 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage For...