Power MOSFET
PD-96149
IRF7704GPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Packa...
Description
PD-96149
IRF7704GPbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free
VDSS
-40V
RDS(on) max (mW)
46@VGS = -10V 74@VGS = -4.5V
ID
-4.6A -3.7A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
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with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
B
T
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-40 -4.6 -3.7 -19 1.5 1.0 12 ± 20 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resistance
Parameter
RθJA Maximum ...
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