Power MOSFET
PD- 96151
IRF7752GPbF
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Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ...
Description
PD- 96151
IRF7752GPbF
l l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
30V
RDS(on) max
0.030@VGS = 10V 0.036@VGS = 4.5V
ID
4.6A 3.9A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner
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with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
30 4.6 3.7 37 1.0 0.64 8.0 ± 12 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resis...
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