IRF7757GPBF

PD- 96154A IRF7757GPbF l l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max (mW) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # Ã2ÃT !Ã2ÃB "Ã2ÃT! #Ã2ÃB! 'Ã2Ã9 &Ã2Ã9 %Ã2Ã9 $Ã2Ã9 & % $ signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.8 3.9 19 1.2 0.76 9.5 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance...