Document
PD - 94603
HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA)
IRF7YSZ44VCM 60V, N-CHANNEL
Product Summary
Part Number
IRF7YSZ44VCM BVDSS
60V
RDS(on) ID 0.0195Ω 20A*
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
Low Ohmic TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 20* 20* 80 50 0.4 ±20 71 20 5.0 1.6 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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02/07/03
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IRF7YSZ44VCM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 — — 2.0 17 — — — — — — — — — — — —
Typ Max Units
— 0.064 — — — — — — — — — — — — — — 6.8 — — 0.0195 4.0 — 25 250 100 -100 50 18 25 20 120 60 90 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 20A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 20A ➃ VDS = 60V ,VGS=0V VDS = 48V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =10V, ID = 20A VDS = 48V VDD = 30V, ID = 20A, VGS = 10V, RG = 9.1Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
l Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1730 375 60
— — —
pF
Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristi.