RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
PD-97251
2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET T...
Description
PD-97251
2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK)
Product Summary
Part Number IRHLA7670Z4 IRHLA7630Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.60Ω 1.36Ω 0.60Ω 1.36Ω ID 0.8A -0.56A 0.8A -0.56A CHANNEL N P N P
14-Lead Flat Pack
International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Opera...
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