Document
PD - 94783
IRL3715ZCS IRL3715ZCL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET® Power MOSFET
VDSS RDS(on) max
20V 11m:
Qg
7.0nC
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
D2Pak IRL3715ZCS
TO-262 IRL3715ZCL
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 50 36
Units
V A
c
g g
200 45 23 0.30 -55 to + 175 W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount)
Typ.
Max.
3.33 40
Units
°C/W
f
––– –––
Notes through
are on page 11
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IRL3715ZCS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
20 ––– ––– ––– 1.65 ––– ––– ––– ––– ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.014 9.2 12.4 2.1 -5.2 ––– ––– ––– ––– ––– 7.0 2.1 0.9 2.3 1.7 3.2 3.7 7.1 44 11 4.6 870 270 140 ––– ––– 11 15.5 2.55 ––– 1.0 150 100 -100 ––– 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV/°C µA V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
e e
VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A
See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 12A Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current
Ã
d
Typ. ––– ––– –––
Max. 44 12 4.5
Units mJ A mJ
Repetitive Avalanche Energy
––– ––– ––– ––– ––– ––– ––– ––– 9.1 2.2
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
50
g
Conditions
MOSFET symbol
D
A 200 1.0 14 3.3 V ns nC
Ã
showing the integral reverse
G S
p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs
e
e
2
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IRL3715ZCS/L
1000
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
10
3.0V
3.0V 60µs PULSE WIDTH Tj = 25°C
1 0.1 1 10
60µs PULSE WIDTH Tj = 175°C
1 0.1 1 10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (Α)
ID = 30A VGS = 10V
T J = 25°C
100
1.5
T J = 175°C
1.0
VDS = 10V 60µs PULSE WIDTH
10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRL3715ZCS/L
10000
12
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
ID= 12A 10 8 6 4 2 0
VDS= 20V VDS= 10V
C, Capacitance (pF)
1000
Ciss
Coss Crss
100 1 10 100
0
VDS, Drain-to-Source Voltage (V)
4
8
12
16
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0 T J = 175°C 10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec 10 1msec 10msec 1 10 100
1.0
T J = 25°C VGS = 0V
0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)
1
Tc = 25°C Tj = 175°C Single Pulse 0
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximu.