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FET Array. 4AM17 Datasheet

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FET Array. 4AM17 Datasheet






4AM17 Array. Datasheet pdf. Equivalent




4AM17 Array. Datasheet pdf. Equivalent





Part

4AM17

Description

Silicon N/P-Channel/P-Channel Power MOS FET Array



Feature


4AM17 Silicon N/P Channel MOS FET High S peed Power Switching ADE-208-729 (Z) 1 st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) 0.17 Ω, VGS = 10 V, ID = 4 A P Chan nel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devi ces. • High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S 3 S.
Manufacture

Hitachi Semiconductor

Datasheet
Download 4AM17 Datasheet


Hitachi Semiconductor 4AM17

4AM17; 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9 , 11. Drain 3, 6, 7, 10. Source www.Da taSheet.in 4AM17 Absolute Maximum Rati ngs (Ta = 25°C) Item Symbol Ratings Nc h Drain to source voltage Gate to sourc e voltage Drain current Drain peak curr ent Body-drain diode reverse drain curr ent Channel dissipation Channel dissipa tion Channel temperature Storage temper ature Note: 1. PW ≤.


Hitachi Semiconductor 4AM17

10 µs, duty cycle ≤ 1% 2. 4 devices operation VDSS VGSS ID I D(pulse) I DR Pch (Tc = 25°C) Pch Tch Tstg Note2 Not e2 Note1 Unit Pch –60 ±20 –8 –3 2 –8 28 4.0 150 V V A A A W W °C °C 60 ±20 8 32 8 –55 to +150 2 www .DataSheet.in 4AM17 Electrical Charact eristics (Ta = 25°C) ( N Channel ) Ite m Drain to source breakdown voltage Gat e to source breakdown voltage Gate to.


Hitachi Semiconductor 4AM17

source leak current Zero gate voltage d rain current Gate to source cutoff volt age Static drain to source on state res istance Forward transfer admittance Inp ut capacitance Output capacitance Rever se transfer capacitance Gate series res istance Turn-on delay time Rise time Tu rn-off delay time Fall time Body–drai n diode forward voltage Body–drain di ode reverse recovery t.

Part

4AM17

Description

Silicon N/P-Channel/P-Channel Power MOS FET Array



Feature


4AM17 Silicon N/P Channel MOS FET High S peed Power Switching ADE-208-729 (Z) 1 st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) 0.17 Ω, VGS = 10 V, ID = 4 A P Chan nel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devi ces. • High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S 3 S.
Manufacture

Hitachi Semiconductor

Datasheet
Download 4AM17 Datasheet




 4AM17
4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
N Channel: RDS(on) 0.17 Ω, VGS = 10 V, ID = 4 A
P Channel : RDS(on) 0.2 Ω, VGS = –10 V, ID = –4 A
4 V gate drive devices.
High density mounting
Outline
SP-12
ADE-208-729 (Z)
1st. Edition
February 1999
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
www.DataSheet.in




 4AM17
4AM17
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch (Tc = 25°C) Note2
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10 µs, duty cycle 1%
2. 4 devices operation
Ratings
Nch Pch
60 –60
±20 ±20
8 –8
32 –32
8 –8
28
4.0
150
–55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
www.DataSheet.in




 4AM17
Electrical Characteristics (Ta = 25°C)
( N Channel )
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate series resistance
Symbol Min
V(BR)DSS
V(BR)GSS
I GSS
I DSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
60
±20
1.0
3.5
Coss —
Crss
Rg —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 3. Pulse test
t d(on)
tr
t d(off)
tf
VDF
t rr
4AM17
Typ
0.13
0.19
5.5
33
220
5.2
1.5
0.15
0.5
3.2
1.4
1.5
850
Max
±10
250
2.5
0.17
0.24
Unit
V
V
µA
µA
V
S
pF
pF
pF
k
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 4 A, VGS = 10 V Note3
ID = 4 A, VGS = 4 V Note3
ID = 4 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VDS = 10 V, VGS = 0
f = 1 MHz
VGS = 10 V, ID = 4 A
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0
diF/ dt = 50 A/ µs
www.DataSheet.in
3



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