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4AM13 Datasheet, Equivalent, FET Array.

Silicon N-Channel/P-Channel Power MOS FET Array

Silicon N-Channel/P-Channel Power MOS FET Array

 

 

 

Part 4AM13
Description Silicon N-Channel/P-Channel Power MOS FET Array
Feature 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed p ower switching Features
• Low on-res istance N-channel: RDS(on) ≤ 0.
4 Ω, VGS = 10 V, ID = 1.
5 A P-channel: RDS( on) ≤ 0.
45 Ω, VGS = –10 V, ID = 1.
5 A




• Capable of 4 V gate drive Low drive current High s peed switching High density mounting Su itable for H-bridged motor driver www.
DataSheet.
in 4AM13 Outline Absolute M aximum Ratings (Ta = 25°C) (1 Unit) Ra ting Item Drain to source voltage Gate to source voltage Drain current Drain p eak current Body to drain diode reverse drain current Channel dissipation Chan .
Manufacture Hitachi Semiconductor
Datasheet
Download 4AM13 Datasheet
Part 4AM13
Description Silicon N-Channel/P-Channel Power MOS FET Array
Feature 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed p ower switching Features
• Low on-res istance N-channel: RDS(on) ≤ 0.
4 Ω, VGS = 10 V, ID = 1.
5 A P-channel: RDS( on) ≤ 0.
45 Ω, VGS = –10 V, ID = 1.
5 A




• Capable of 4 V gate drive Low drive current High s peed switching High density mounting Su itable for H-bridged motor driver www.
DataSheet.
in 4AM13 Outline Absolute M aximum Ratings (Ta = 25°C) (1 Unit) Ra ting Item Drain to source voltage Gate to source voltage Drain current Drain p eak current Body to drain diode reverse drain current Channel dissipation Chan .
Manufacture Hitachi Semiconductor
Datasheet
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