4AM16

4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A High speed switching High density mounting Suitable for H-brided motor driver Outline www.DataSheet.in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Device Operation Tch Tstg 2 2 1 Nch 60 ±20 8 32 8 28 4.0 150 Pch –60 ±20 –8 –32 –8 Unit V V A A A W W °C °C –55 to +150 2 www.DataSheet.in 4AM16 Electrical Characteristics (Ta = 25°C) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.5 — — — — — — — — — Typ — — — — — 0.13 0.18 5.5 400 220 60 5 45 150 85 1.2 120 Max — — ±10 –250 2.0 0.17 0.24 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V*1 I D = 4 A, VGS = 4 V*1 ID = ...