LPD200SOT343

PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT FEATURES ♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package. The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications. ELECTRICAL SPECIFICATIONS @ TAmbient = 25° C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Br...