SEMICONDUCTOR
TECHNICAL DATA
General Description
5
KU2751K
N-Ch Trench MOSFET
L1 4
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.
D
e
8
1
b
E
FEATURES
VDSS=30V, ID=52A. Low Drain to Source On-state Resistance. : RDS(ON)=11m§ : RDS(ON)=15m§ (Max.) @ VGS=10V (Max.) @ VGS=4.5V
D1 H E2 E1 K L 1
A C
DIM A b
C D D1 E E1 E2 e H
MILLIMETERS
8
5
4
K L L1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current
Unless otherwise Noted)
SYMBOL RATING VDSS VGSS 30 20 52 A 208 170 54 W 2.5 150 -55 150 2.3 50 /W /W mJ UNIT V V
1,2,3 : Source 4 : Gate 5,6,7,8 : Drain
_ 0.10 1.00 + 0.41+0.10/-0.08 _ 0.05 0.25 + _ 0.10 4.90 + 3.81+0.15/-0.20 _ 0.10 6.00 + _ 0.05 5.75 + _ 0.20 3.58 + 1.27 BSC _ 0.10 0.51 + 1.10 MIN _ 0.10 0.61 + _ 0.07 0.13 + 0 ~ 12
PSOP-8
MARKING
DC@TC=25 Pulsed
(Note1) (Note2.