KU2751K

SEMICONDUCTOR TECHNICAL DATA General Description 5 KU2751K N-Ch Trench MOSFET L1 4 This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. D e 8 1 b E FEATURES VDSS=30V, ID=52A. Low Drain to Source On-state Resistance. : RDS(ON)=11m§ : RDS(ON)=15m§ (Max.) @ VGS=10V (Max.) @ VGS=4.5V D1 H E2 E1 K L 1 A C DIM A b C D D1 E E1 E2 e H MILLIMETERS 8 5 4 K L L1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS 30 20 52 A 208 170 54 W 2.5 150 -55 150 2.3 50 /W /W mJ UNIT V V 1,2,3 : Source 4 : Gate 5,6,7,8 : Drain _ 0.10 1.00 + 0.41+0.10/-0.08 _ 0.05 0.25 + _ 0.10 4.90 + 3.81+0.15/-0.20 _ 0.10 6.00 + _ 0.05 5.75 + _ 0.20 3.58 + 1.27 BSC _ 0.10 0.51 + 1.10 MIN _ 0.10 0.61 + _ 0.07 0.13 + 0 ~ 12 PSOP-8 MARKING DC@TC=25 Pulsed (Note1) (Note2) (Note3) (Note1) (Note2) ID IDP EAS PD Tj Tstg Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient KU2751 K Type Name Lot No (Note1) (Note2) RthJC RthJA Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1¡¨ 1¡¨ Pad of 2 oz copper. Note 3) L=78.5 H, IAS=52A, VDD=15V, VGS=10V, Starting Tj=25 PIN CONNECTIO...