D70F3210YGC

User’s Manual V850ES/KF1 , V850ES/KG1 , V850ES/KJ1 32-Bit Single-Chip Microcontrollers Hardware TM TM TM V850ES/KF1: µPD703208 µPD703208(A) µPD703208Y µPD703208Y(A) µPD703209 µPD703209(A) µPD703209Y µPD703209Y(A) µPD703210 µPD703210(A) µPD703210Y µPD703210Y(A) µPD70F3210 µPD70F3210(A) µPD70F3210Y µPD70F3210Y(A) V850ES/KG1: µPD703212 µPD703212(A) µPD703212Y µPD703212Y(A) µPD703213 µPD703213(A) µPD703213Y µPD703213Y(A) µPD703214 µPD703214(A) µPD703214Y µPD703214Y(A) µPD70F3214 µPD70F3214(A) µPD70F3214Y µPD70F3214Y(A) V850ES/KJ1: µPD703216 µPD703216(A) µPD703216Y µPD703216Y(A) µPD703217 µPD703217(A) µPD703217Y µPD703217Y(A) µPD70F3217 µPD70F3217(A) µPD70F3217Y µPD70F3217Y(A) Document No. U15862EJ3V0UD00 (3rd edition) Date Published January 2003 N CP(K) 2002 Printed in Japan www.DataSheet.in [MEMO] 2 User’s Manual U15862EJ3V0UD www.DataSheet.in NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive mater...