Document
Thyristor Modules Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 312 PSKH 312
ITRMS ITAVM VRRM
= 2x 520 A = 2x 320 A = 1200-1800 V
3
VRSM VDSM V 1300 1500 1700 1900
VRRM VDRM V 1200 1400 1600 1800
Type
1
2
76 5 4
PSKT PSKT PSKT PSKT
312-12io1 312-14io1 312-16io1 312-18io1
PSKH PSKH PSKH PSKH
312-12io1 312-14io1 312-16io1 312-18io1
Symbol
ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM
Test Conditions
TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings
520 320 9200 10100 8000 8800 423 000 423 000 320 000 321 000 100 500 1000 120 60 20 10 -40...+140 140 -40...+125 A A A A A A A 2s A 2s A 2s A 2s A/µs A/µs V/µs W W W V °C °C °C V~ V~ PSKH PSKT
3
6 7 1
5 4 2
3
1
5 42
∫i2dt
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
● ●
(di/dt)cr
TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A, non repetitive, IT = ITAVM diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 µs
● ● ● ●
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight
Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 148688 Keyed gate/cathode twin pins
Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches
● ● ● ● ●
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
3000 3600
Mounting torque (M6) Terminal connection torque (M8) Typical including screws
4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g
Advantages Simple mounting Improved temperature and power cycling capability Reduced protection circuits
● ● ●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
www.DataSheet.in
Symbol
IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a
Test Conditions
TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25°C
Characteristic Values
40 1.32 0.8 0.68 2 3 150 220 0.25 10 200 150 2 typ. 200 760 275 0.12 0.06 0.16 0.08 mA V V mΩ V V mA mA V mA mA mA µs µs
VG
10
1: IGT, TVJ = 140°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
V
For power-loss calculations only (TVJ = 140°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25°C -40°C 25°C -40°C
3 2 1 1 4 5 6
VD = 2/3 VDRM VD = 2/3 VDRM
TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/µs TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs per per per per thyristor (diode); DC current module thyristor (diode); DC current module
4: PGM = 20 W IGD, TVJ = 140°C 0.1 10-3 10-2 10-1 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102
Fig. 1 Gate trigger characteristics
100
µC A K/W K/W K/W K/W
tgd
TVJ = 25°C
µs
other values see Fig. 8/9
typ.
Limit
Creeping distance on surface Creepage distance in air Maximum allowable acceleration
12.7 m m 9.6 m m 50 m/s 2
10
1
Dimensions in mm (1 mm = 0.0394") PSKT
M8x20
0.01
0.1
1
PSKH
M8x20
IG
A
10
Fig. 2 Gate trigger delay time
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
www.DataSheet.in
10000
106
ITSM
A
8000
50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C
I2t A2s
VR = 0V
600 A
ITAVM 500 I
FAVM
TVJ = 45°C
400 6000 105 4000 200 2000
TVJ = 140°C
DC 180° sin 120° 60° 30°
300
100
0 0.001
0.01
0.1
s t
1
104
1 t
ms
10
0
0
25
50
75
100
TC
125 °C 150
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
600 Ptot W 500
Fig. 4 I2t versus time (1-10 ms)
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
RthKA K/W
400
0.06 0.1 0.2 0.3 0.4 0.6 0.8
DC 180° sin 120° 60° 30°
300
200
100
0
0
100
200
300
400
500 A 0 ITAVM / IFAVM
25
50
75
100
125 °C TA
150
3000 Ptot W 2500
RthKA K/W
2000
1500 Circuit B6 3xMCC312 or 3xPSKH 312 or
3xPSKT 312 3xMCD312
0.02 0.04 0.07 0.1 0.15 0.2 0.3
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
1000
500
0
0
200
400
600
800 A IdAVM
0
25
50
75
100
°C 125 TA
150
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09.