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PSKT312 Dataheets PDF



Part Number PSKT312
Manufacturers Powersem
Logo Powersem
Description Thyristor/Diode Modules
Datasheet PSKT312 DatasheetPSKT312 Datasheet (PDF)

Thyristor Modules Thyristor/Diode Modules Preliminary Data Sheet PSKT 312 PSKH 312 ITRMS ITAVM VRRM = 2x 520 A = 2x 320 A = 1200-1800 V 3 VRSM VDSM V 1300 1500 1700 1900 VRRM VDRM V 1200 1400 1600 1800 Type 1 2 76 5 4 PSKT PSKT PSKT PSKT 312-12io1 312-14io1 312-16io1 312-18io1 PSKH PSKH PSKH PSKH 312-12io1 312-14io1 312-16io1 312-18io1 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) .

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Thyristor Modules Thyristor/Diode Modules Preliminary Data Sheet PSKT 312 PSKH 312 ITRMS ITAVM VRRM = 2x 520 A = 2x 320 A = 1200-1800 V 3 VRSM VDSM V 1300 1500 1700 1900 VRRM VDRM V 1200 1400 1600 1800 Type 1 2 76 5 4 PSKT PSKT PSKT PSKT 312-12io1 312-14io1 312-16io1 312-18io1 PSKH PSKH PSKH PSKH 312-12io1 312-14io1 312-16io1 312-18io1 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) Maximum Ratings 520 320 9200 10100 8000 8800 423 000 423 000 320 000 321 000 100 500 1000 120 60 20 10 -40...+140 140 -40...+125 A A A A A A A 2s A 2s A 2s A 2s A/µs A/µs V/µs W W W V °C °C °C V~ V~ PSKH PSKT 3 6 7 1 5 4 2 3 1 5 42 ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A, non repetitive, IT = ITAVM diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 µs ● ● ● ● (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 148688 Keyed gate/cathode twin pins Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches ● ● ● ● ● 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M6) Terminal connection torque (M8) Typical including screws 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Advantages Simple mounting Improved temperature and power cycling capability Reduced protection circuits ● ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.DataSheet.in Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25°C Characteristic Values 40 1.32 0.8 0.68 2 3 150 220 0.25 10 200 150 2 typ. 200 760 275 0.12 0.06 0.16 0.08 mA V V mΩ V V mA mA V mA mA mA µs µs VG 10 1: IGT, TVJ = 140°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V For power-loss calculations only (TVJ = 140°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25°C -40°C 25°C -40°C 3 2 1 1 4 5 6 VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/µs TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs per per per per thyristor (diode); DC current module thyristor (diode); DC current module 4: PGM = 20 W IGD, TVJ = 140°C 0.1 10-3 10-2 10-1 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102 Fig. 1 Gate trigger characteristics 100 µC A K/W K/W K/W K/W tgd TVJ = 25°C µs other values see Fig. 8/9 typ. Limit Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 m m 9.6 m m 50 m/s 2 10 1 Dimensions in mm (1 mm = 0.0394") PSKT M8x20 0.01 0.1 1 PSKH M8x20 IG A 10 Fig. 2 Gate trigger delay time  2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.DataSheet.in 10000 106 ITSM A 8000 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C I2t A2s VR = 0V 600 A ITAVM 500 I FAVM TVJ = 45°C 400 6000 105 4000 200 2000 TVJ = 140°C DC 180° sin 120° 60° 30° 300 100 0 0.001 0.01 0.1 s t 1 104 1 t ms 10 0 0 25 50 75 100 TC 125 °C 150 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration 600 Ptot W 500 Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) RthKA K/W 400 0.06 0.1 0.2 0.3 0.4 0.6 0.8 DC 180° sin 120° 60° 30° 300 200 100 0 0 100 200 300 400 500 A 0 ITAVM / IFAVM 25 50 75 100 125 °C TA 150 3000 Ptot W 2500 RthKA K/W 2000 1500 Circuit B6 3xMCC312 or 3xPSKH 312 or 3xPSKT 312 3xMCD312 0.02 0.04 0.07 0.1 0.15 0.2 0.3 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 500 0 0 200 400 600 800 A IdAVM 0 25 50 75 100 °C 125 TA 150 POWERSEM GmbH, Walpersdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09.


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