WTPB12A60CW

WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=17A ■ High Commutation dV/dt. General Description General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings Symbol VDRM/VPRM IT(RMS) ITSM I2t PGM PG(AV) dI/dt IFGM VRGM TJ, Tstg (TJ=25℃ unless otherwise specified) Parameter Peak Repetitive Forward Blocking Voltage(gate open) Forward Current RMS (All Conduction Angles, TJ=58℃) Peak Forward Surge Current, Circuit Fusing Considerations (full Cycle, Sine Wave, 50/60 Hz) (tp= 10 ms) (Note 1) Value 600 12 120/126 100 5 1 50 4 10 -40~125 -40~150 Units V A A A2s W W A/μs A V ℃ ℃ Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us) Average Gate Power — Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200mA; dIG/dt = 200mA/μs Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS) Peak Gate Voltage — Reverse, TJ= 125°C Junction Temperature Storage Temperature (20 µs, 120 PPS) Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swiTJh to the on-state. The rate of ris...