Bi-Directional Triode Thyristor
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4A60 SW WTPB WTPB4 60SW
Bi-Directional Triode Thyristor
Features
◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State ...
Description
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4A60 SW WTPB WTPB4 60SW
Bi-Directional Triode Thyristor
Features
◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ.) @ ITM) High Commutation dv/dt High Junction temperature(TJ=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (T =
J
25°C unless otherwise specified)
Symbol
VDRM /VRRM IT(RMS) ITSM
2
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current TJ = 110 °C
Condition
Ratings Units
600 4.0 50Hz 60Hz 30 A 31 5.1 5 A2 s W W A V ℃ ℃ V A
One cycle, Peak value, nonrepetitive full cycle
It PGM PG(AV) IGM VGM TJ TSTG
I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature TJ = 125 °C TJ = 125 °C
1 4.0 7.0 -40~+150 -40~+150
Thermal Characteristics
Symbol
RθJc RθJA
Parameter
Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC)
Value
2.6 60
Units
℃/W ℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
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4A60 SW WTPB TPB4 60SW
Electrical Characteristics (TC=25℃
Symbol
IDRM/IRRM unless otherwise noted)
Characteristics
off-state le...
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