WTD1386

WTD1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A) * Excellent DC Current Gain Characteristics 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TC = 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -30 -20 -6 -5 -10 20 +150 -55 to +150 Unit V V V A W ˚C ˚C Device Marking WTD1386 = 1386 WEITRON http://www.weitron.com.tw www.DataSheet.in 1/4 09-Sep-05 WTD1386 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V nA nA ON CHARACTERISTICS1 DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A Note 1.Pulse Test : Pulse width ≤ 380µs, Duty cycle ≤ 2%. hFE VCE(sat) 82 580 -1.0 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1MHz fT Cob 120 60 MHz pF CLASSIFICATION OF hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 E 370 - 580 WEITRON http://www.weitro...