WSP20D65

www.DataSheet.in WSP20D65 Power Schottky Rectifier Features ■ 20A(1×10A),65V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■ Guard ring for over voltage protection, High reliability ■ Maximum Junction Temperature Range(175℃) General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications. A1 K A2 TO220 Absolute Maximum Ratings Symbol VDRM VDC IF(RMS) IF(AV) IFSM PARM IRRM dv/dt TJ, Tstg Parameter Repetitive peak reverse voltage Maximum DC blocking voltage RMS forward current per diode Average forward current per device Surge non repetitive forward current Repetitive peak avalanche power Repetitive peak reverse current Critical rate of rise of reverse voltage Junction Temperature Storage Temperature Value 65 65 30 10 Units V V A A 20 150 5800 1 10000 175 -40~150 A W A V/ns ℃ ℃ Thermal Characteristics Symbol RQJC RQCS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Value Min 0.1 Typ - Max 1.9 - Units ℃/W ℃/W Rev. C Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 www.DataSheet.in WSP20D65 ) Electrical Characteristics (per diode diode) Characteristics Reverse leakage current Symbol IR Test Condition Tj = 25°C VR = VRRM Tj = 125°C Tj = 25°C IF= 10A Tj = 125°C Min - Typ. - Max 30 30 0.76 0.68 Unit μA mA - 0.67 0.63 0.62 Forward voltage drop VF IF= 20A V Tj =...