WSA753

WSA753 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER ◇ Low Speed Switching ◇ Complement to WSC752 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse)* Base Current Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) Junction Temperature Storage Temperature *PW≤ 10ms,Duty Cycle≤ 50% (Ta=25℃) L0sdn Unit V V V A A A W W ℃ ℃ 1. Base 2. Collector 3. Emitter Symbol VCBO VCEO VEBO IC Ic IB PC PC Tj Tstg Value -40 -30 -5 -2 -7 -0.6 15 1.2 150 -55~ +150 3 1 2 ELECTRICAL CHARACTERISTICS Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO #hFE (Ta=25℃, unless otherwise specified) Test Condition Ic=-100㎂ ,IE=0 Ic=-10mA, IB=0 Ic=-1mA ,IC=0 VCB=-40V ,IE=0 VEB=-5V ,IC=0 VCE=-2V, IC=-500mA Min TYP MAX Unit -40 -30 -5 -0.1 -0.1 100 -0.5 400 -0.8 -2 V MHZ pF V V V ㎂ ㎂ VCE(sat)(1) IC=-2.0A, IB=-200㎃ VCE(sat)(2) IC=-1.5A, IB=-30㎃ Current Gain Bandwith Product Output Capacitance * Pulse test:PW≤ 350us,Duty cycle≤ 2% # hFE Classification: Classification hFE O 100~200 Y 160~320 fT Cob VCE=-5V,IC=-500mA VCB=-10V ,IE=0 f=1MHZ 120 13 G 200~400 JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 1 www.DataSheet.in WSA753 Static Ch...