WFY3N02

WFY3N02 20V N−Channel MOSFET Features ■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V ■ 1.2 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load switching and PA switching. G S D SOT-23 Marking: H04F Absolute Maximum Ratings(Tc=25℃ unless otherwise noted) Symbol VDSS ID IDM PD VGS ESD TJ, Tstg TL Drain Source Voltage Continuous Drain Current Drain Current Pulsed Total Power Dissipation(Note 1) Gate to Source Voltage ESD Capability (Note 3) Junction and Storage Temperature Maximum lead Temperature for soldering purposes C=100pF,RS = 1500Ω Parameter Value 20 2.8 8 0.9 Tc=75℃ 0.6 ±8 225 -55~150 260 Units V A A W V V ℃ ℃ Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Val...