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P12N6 5 WF WFP N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS techno...
