Silicon N-Channel MOSFET
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9N20 WFP FP9
Silicon N-Channel MOSFET
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate...
Description
www.DataSheet.in
9N20 WFP FP9
Silicon N-Channel MOSFET
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
G D S
TO220
Absolute Maximum Ratings
Symbol
VDSS Drain Source Voltage
Parameter
Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1)
Value
200
Units
V
ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL
9 5.7 36 ±30 160 7.2 5.5 72 0.57 -55~150 300
A A A V mJ mJ V/ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min
-
Value Typ
0.5 -
Max
1.74 62.5
Units
℃/W ℃/W ℃/W
Rev, C Dec.2009
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