Silicon N-Channel MOSFET
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WFP8N60
Silicon N-Channel MOSFET
Features
� � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate ...
Description
www.DataSheet.in
WFP8N60
Silicon N-Channel MOSFET
Features
� � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
600 7.5 4.5 30 ±30 240 15 4.5 145 1.15 -55~150 300
Units
V A A A V mJ mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
0.5 -
Typ
-
Max
0.86 62.5
Units
℃/W ℃/W ℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., L...
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