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PDMB400B12C Dataheets PDF



Part Number PDMB400B12C
Manufacturers Nihon Inter Electronics Corporation
Logo Nihon Inter Electronics Corporation
Description IGBT
Datasheet PDMB400B12C DatasheetPDMB400B12C Datasheet (PDF)

IGBT MODULE CIRCUIT Dual 400A 1200V OUTLINE DRAWING PDMB400B12C 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 500g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB400B12C 1200 +/ - 20 400 800 1900 -40 to +150 -40 to +125 2500 3 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1.

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IGBT MODULE CIRCUIT Dual 400A 1200V OUTLINE DRAWING PDMB400B12C 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 500g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB400B12C 1200 +/ - 20 400 800 1900 -40 to +150 -40 to +125 2500 3 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=400A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.5 ohm RG= 1.0 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 33000 0.25 0.40 0.25 0.80 Max. 8.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 400 800 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=400A,VGE=0V IF=400A,VGE=-10V,di/dt=800A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.065 0.12 www.DataSheet.in PDMB400B12C Fig.1- Output Characteristics (Typical) 800 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ IC=200A 800A VGE =20V 15V 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 400A Collector Current I C (A) 600 9V 400 8V 200 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 ℃ I C=200A 800A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 RL=1.5Ω TC=25℃ 14 Gate to Emitter Voltage V GE (V) 400A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 4 200V 100 0 0 500 1000 1500 2000 2500 2 0 3000 0 4 8 12 16 20 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 Fig.6- Collector Current vs. Switching Time (Typical) 1.2 Cies VGE=0V f=1MHZ TC=25℃ 1 Switching Time t (μs) 20000 tOFF 0.8 VCC=600V RG= 1Ω VGE=±15V TC=25℃ Capacitance C (pF) 10000 Coes 5000 tf 0.6 2000 1000 500 0.4 Cres 0.2 200 tON tr 0 100 200 300 400 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0 Collector to Emitter Voltage V CE (V) Collector Current IC (A) www.DataSheet.in PDMB400B12C Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 800 (Typical) TC=25℃ 700 VCC=600V IC=400A VGE = ± 15V TC=25 ℃ TC=125℃ toff ton tr Switching Time t ( μ s) 2 1 Forward Current I F (A) 600 500 400 300 200 100 0 tf 0.5 0.2 0.1 0.05 0.5 1 2 5 10 20 50 0 1 2 3 4 Series Gate Impedance R G ( Ω ) Forward Voltage V F (V) Fig.9- Reverse Recovery Characteristics (Typical) 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 5000 2000 1000 500 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) I F=400A TC=25 ℃ 500 RG=1Ω VGE=±15V TC≦125℃ Collector Current I C (A) 300 200 trr 200 100 50 20 10 100 50 I RrM 2 1 0.5 0.2 20 10 0 400 800 1200 1600 2000 2400 0.1 0 400 800 1200 1600 -di/dt (A/μ s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 1 (℃/W) 5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 2x10 -4 10 -5 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25℃ 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) www.DataSheet.in .


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