IGBT
QS043-402-20334 (2/4)
IGBT Module-Dual
□ : CIRCUIT
600 A,1200V
PDMB600B12
140 130 110
□ : OUTLINE DRAWING
3...
Description
QS043-402-20334 (2/4)
IGBT Module-Dual
□ : CIRCUIT
600 A,1200V
PDMB600B12
140 130 110
□ : OUTLINE DRAWING
36
43.8
10 13.8 11.5
4 - Ø6.5
1
2
3 5
5(E1) 4(G1)
4 65 4-M4
LABEL
4
24 35
14.5
40 110 130
(C2E1) 1
(E2) 2
(C1) 3
7(G2) 6(E2)
3-M8
7 6
14.5
20.5
10
Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Busbar to Main Terminal Mounting Torque □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor M4 M8 Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
1,200 ±20 600 1,200 2,800 -40~+150 -40~+125 2,500 3(30.6) 1.4(14.3) 10.5(107)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 600A,VGE= 15V VCE= 5V,IC= 600mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 1Ω RG= 1Ω VGE= ±15V Min. - - - 4 - - - - - Typ. - - 1.9 - 50,000 0.25 0.40 0.25 0.80 Max. 12 1.0 2.4 8 - 0.45 0.70 0.35 1.10 Unit mA μA V V pF
Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Ca...
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