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IXTA6N50D2 Dataheets PDF



Part Number IXTA6N50D2
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description N-Channel MOSFET
Datasheet IXTA6N50D2 DatasheetIXTA6N50D2 Datasheet (PDF)

Depletion Mode MOSFET N-Channel IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 VDSX = ID(on) > ≤ RDS(on) 500V 6A 500mΩ TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings 500 V ±20 V ±30 V 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.

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Depletion Mode MOSFET N-Channel IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 VDSX = ID(on) > ≤ RDS(on) 500V 6A 500mΩ TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings 500 V ±20 V ±30 V 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250μA VGS(off) VDS = 25V, ID = 250μA IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V TJ = 125°C RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 Characteristic Values Min. Typ. Max. 500 V - 2.5 - 4.5 V ±100 nA 5 μA 50 μA 500 mΩ 6 A G S D (Tab) TO-220AB (IXTP) GD S D (Tab) TO-247 (IXTH) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Applications • Audio Amplifiers • Start-up Circuits • Protection Circuits • Ramp Generators • Current Regulators • Active Loads © 2011 IXYS CORPORATION, All Rights Reserved DS100177B(03/11) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 30V, ID = 3A, Note 1 Ciss Coss Crss VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = ±5V, VDS = 250V, ID = 3A RG = 2.4Ω (External) Qg(on) Qgs Qgd VGS = 5V, VDS = 250V, ID = 3A RthJC RthCS TO-220 TO-247 Characteristic Values Min. Typ. Max. IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 TO-220 Outline 2.8 4.5 S 2800 pF 255 pF 64 pF 28 ns 72 ns 82 ns 43 ns 96 nC 11 nC 48 nC Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 0.50 0.21 0.41 °C/W °C/W °C/W Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 400V, ID = 0.45A, TC = 75°C, Tp = 5s Characteristic Values Min. Typ. Max. 180 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VSD IF = 6A, VGS = -10V, Note 1 trr IRM QRM IF = 3A, -di/dt = 100A/μs VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 1.3 V 350 ns 16 A 2.8 μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-247 Outline TO-263 Outline 1. Gate 2. Drain 3. Source 4. Drain Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 4.83 0.99 1.40 0.74 1.40 9.65 8.89 9.65 10.41 6.22 2.54 14.61 2.29 1.02 1.27 8.13 BSC 15.88 2.79 1.40 1.78 Inches Min. Max. .160 .190 .020 .039 .045 .055 .016 .029 .045 .055 .340 .380 .280 .320 .380 .405 .270 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070 1 = Gate 2 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Fig. 1. Output Characteristics @ TJ = 25ºC 6 VGS = 5V 3V 5 2V 1V 4 0V 3 2 -1V 1 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Volts ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 40 VGS = 5V 35 4V 3V 30 25 2V 20 1V 15 0V 10 5 -1V 0 -2V 0 5 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 6 VGS = 5V 2V 5 1V 1E+00 1E-01 4 0V 1E-02 ID - Amperes 3 -1V 1E-03 2 1E-04 1 -2V 1E-05 0 1E-06 0 1 2 3 4 5 0 VDS - Volts Fig. 4. Drain Current @ TJ = 25ºC VGS = - 2.25V - 2.50V - 2.75V - 3.00V - 3.25V - 3.50V - 3.75V 100 200 300 400 500 600 VDS - Volts 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 0 Fig. 5. Drain Current @ TJ = 100ºC VGS = -2.50V -2.75V -3.00V -3.25V -3.50V -3.75V -4.00V 100 200 300 400 500 600 VDS - Volts RO - Ohms 1.E+09 1.E+08 Fig. 6. Dynamic Output Resistance vs. Gate Voltage ∆VDS = 350V - 100V 1.E+07 1.E+06 1.E+05 TJ = 100ºC TJ = 25ºC 1.E+04 1.E+03 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -2.2 -2.0 VGS - Volts ID - Amperes ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved RDS(on) - Normalized Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 VGS= 0V 2.2 I D = 3A 1.8 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 RDS(on) - Normalized IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 Fig. 8. RDS(on) Normalized to ID = 3A Value vs. Drain Current VGS = 0V 5V - - -.


IXTP6N50D2 IXTA6N50D2 IXTH6N50D2


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