Document
Depletion Mode MOSFET
N-Channel
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
VDSX = ID(on) >
≤ RDS(on)
500V 6A
500mΩ
TO-263 AA (IXTA)
Symbol
VDSX VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
Maximum Ratings
500
V
±20
V
±30
V
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 250μA
IGSX
VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
TJ = 125°C
RDS(on)
VGS = 0V, ID = 3A, Note 1
ID(on)
VGS = 0V, VDS = 25V, Note 1
Characteristic Values Min. Typ. Max.
500
V
- 2.5
- 4.5 V
±100 nA
5 μA 50 μA
500 mΩ
6
A
G S D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
TO-247 (IXTH)
G DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
• Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount • Space Savings • High Power Density
Applications
• Audio Amplifiers • Start-up Circuits • Protection Circuits • Ramp Generators • Current Regulators • Active Loads
© 2011 IXYS CORPORATION, All Rights Reserved
DS100177B(03/11)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 30V, ID = 3A, Note 1
Ciss Coss Crss
VGS = -10V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = ±5V, VDS = 250V, ID = 3A RG = 2.4Ω (External)
Qg(on) Qgs Qgd
VGS = 5V, VDS = 250V, ID = 3A
RthJC RthCS
TO-220 TO-247
Characteristic Values Min. Typ. Max.
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
TO-220 Outline
2.8
4.5
S
2800
pF
255
pF
64
pF
28
ns
72
ns
82
ns
43
ns
96
nC
11
nC
48
nC
Pins: 1 - Gate 3 - Source
2 - Drain 4 - Drain
0.50 0.21
0.41 °C/W °C/W °C/W
Safe-Operating-Area Specification
Symbol SOA
Test Conditions VDS = 400V, ID = 0.45A, TC = 75°C, Tp = 5s
Characteristic Values Min. Typ. Max.
180
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VSD
IF = 6A, VGS = -10V, Note 1
trr
IRM QRM
IF = 3A, -di/dt = 100A/μs VR = 100V, VGS = -10V
Characteristic Values Min. Typ. Max.
0.8
1.3 V
350
ns
16
A
2.8
μC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-247 Outline
TO-263 Outline
1. Gate 2. Drain 3. Source 4. Drain
Dim.
A b b2
c c2 D D1 E
E1 e L L1 L2 L3
Millimeter Min. Max.
4.06 0.51 1.14
0.40 1.14
8.64 8.00
4.83 0.99 1.40
0.74 1.40
9.65 8.89
9.65 10.41
6.22 2.54 14.61 2.29 1.02 1.27
8.13 BSC 15.88 2.79 1.40 1.78
Inches Min. Max.
.160 .190 .020 .039 .045 .055
.016 .029 .045 .055
.340 .380 .280 .320
.380 .405
.270 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070
1 = Gate 2 = Drain 3 = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
Fig. 1. Output Characteristics @ TJ = 25ºC
6
VGS = 5V
3V
5
2V
1V
4
0V 3
2
-1V
1 -2V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Volts
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
40
VGS = 5V
35
4V 3V
30
25
2V
20 1V
15
0V 10
5
-1V
0
-2V
0
5
10
15
20
25
30
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
6
VGS = 5V
2V
5
1V
1E+00 1E-01
4
0V
1E-02
ID - Amperes
3
-1V
1E-03
2
1E-04
1
-2V
1E-05
0
1E-06
0
1
2
3
4
5
0
VDS - Volts
Fig. 4. Drain Current @ TJ = 25ºC
VGS = - 2.25V - 2.50V - 2.75V - 3.00V - 3.25V
- 3.50V
- 3.75V
100
200
300
400
500
600
VDS - Volts
1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05
0
Fig. 5. Drain Current @ TJ = 100ºC
VGS = -2.50V -2.75V -3.00V -3.25V -3.50V
-3.75V
-4.00V
100
200
300
400
500
600
VDS - Volts
RO - Ohms
1.E+09 1.E+08
Fig. 6. Dynamic Output Resistance vs. Gate Voltage
∆VDS = 350V - 100V
1.E+07 1.E+06 1.E+05
TJ = 100ºC
TJ = 25ºC
1.E+04
1.E+03 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -2.2 -2.0
VGS - Volts
ID - Amperes
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
RDS(on) - Normalized
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
VGS= 0V
2.2
I D = 3A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
TJ - Degrees Centigrade
100
125
150
RDS(on) - Normalized
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
0
Fig. 8. RDS(on) Normalized to ID = 3A Value vs. Drain Current
VGS = 0V 5V - - -.