DatasheetsPDF.com

APTC60SKM24CT1G Dataheets PDF



Part Number APTC60SKM24CT1G
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description Buck chopper Super Junction MOSFET SiC chopper diode
Datasheet APTC60SKM24CT1G DatasheetAPTC60SKM24CT1G Datasheet (PDF)

APTC60SKM24CT1G Buck chopper Super Junction MOSFET SiC chopper diode 5 6 Q1 7 8 CR2 3 4 NTC 11 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged 1 2 12 CR2 SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on V.

  APTC60SKM24CT1G   APTC60SKM24CT1G


Document
APTC60SKM24CT1G Buck chopper Super Junction MOSFET SiC chopper diode 5 6 Q1 7 8 CR2 3 4 NTC 11 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged 1 2 12 CR2 SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Pins 1/2 ; 3/4 ; 5/6 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A mJ August, 2009 1–7 APTC60SKM24CT1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com www.DataSheet.in APTC60SKM24CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 3 Max 350 600 24 3.9 200 Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 95A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Min Typ 14.4 17 300 68 102 21 30 100 45 810 1040 1320 1270 µJ ns nC Max Unit nF µJ CR2 SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 40A Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 600 Typ 200 400 40 1.6 2.0 56 260 200 Max 800 4000 1.8 2.4 Unit V µA A V nC pF August, 2009 2–7 APTC60SKM24CT1G – Rev 0 IF = 40A, VR = 300V di/dt =1200A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V www.microsemi.com www.DataSheet.in APTC60SKM24CT1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor SiC Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.8 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜ ⎜T − T ⎟ ⎟⎥ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit kΩ % K % SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 www.DataSheet.in APTC60SKM24CT1G – Rev 0 August, 2009 APTC60SKM24CT1G Typical CoolMOS Performance Curve 0.3 Thermal Impedance (°C/W) 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 720 640 ID, Drain Current (A) 560 480 400 320 240 160 80 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 ID, DC Drain Current (A) 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 240 280 ID, Drain Current (A) VGS=20V Normalized to VGS=10V @ 95A VGS=10V 5V 4.5V 4V VGS=15&10V.


2SD2562 APTC60SKM24CT1G APTC60SKM24T1G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)