SIM150D12SV3

Preliminary SIM150D12SV3 VCES = 1200V Ic = 150A VCE(ON) typ. = 2.7V @ Ic = 150A “HALF-BRIDGE” IGBT Module Features ▪ Update NPT Technology design ▪ 10µs Short circuit capability ▪ Low turn-off loss ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient Applications ▪ SMPS & Electrolysis Machine ▪ High Power Inverters ▪ High Frequency inverter-type Welding machines ▪ Servo Controls ▪ UPS, EPS or Robotics PKG V3 62 mm Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque (per leg) Condition VGE = 0V, Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 80 TC = 80 Ratings 1200 20 150 300 150 300 10 Unit V V A A A A IC = 1.0mA µs V AC 1 minute 2500 -40 ~ 150 -40 ~ 125 360 3.5 3.5 g Nm Nm Electrical Characteristics @ Tj = 25 Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES VFM (unless otherwise specified) Min 1200 - Parameters Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Typ 2.7 5.0 Max 3.1 6.0 1.0 ± 200 Unit Test conditions VGE = 0V, IC = 1.0m...