CGD914MI

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 www.DataSheet.in NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Rugged construction  Gold metallization ensures excellent reliability. APPLICATIONS  CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage CGD914; CGD914MI PINNING - SOT115J DESCRIPTION PIN CGD914 1 2 and 3 5 7 and 8 9 input common +VB common output CGD914MI output common +VB common input DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. Both modules are electrically identical, only the pinning is different. 1 2 3 5 7 8 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 19.75 20.2 345 MAX. 20.25 21.5 375 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi supply voltage RF input voltage single tone 132 channels flat Tstg Tmb storage temperature operating mounting base temperature PARAMETER     40 20 MIN.  70 45 +100 +100 dBmV dBmV C C MAX. 30 V UNIT 2001 Nov 01 2 www.DataSheet...