DatasheetsPDF.com

CGD914MI Dataheets PDF



Part Number CGD914MI
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description 20 dB gain power doubler amplifier
Datasheet CGD914MI DatasheetCGD914MI Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 www.DataSheet.in NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Rugged construction  Gold metallization ensures excellent reliability. APPLICATIONS  CATV systems operating in t.

  CGD914MI   CGD914MI


Document
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 www.DataSheet.in NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Rugged construction  Gold metallization ensures excellent reliability. APPLICATIONS  CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage CGD914; CGD914MI PINNING - SOT115J DESCRIPTION PIN CGD914 1 2 and 3 5 7 and 8 9 input common +VB common output CGD914MI output common +VB common input DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. Both modules are electrically identical, only the pinning is different. 1 2 3 5 7 8 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 19.75 20.2 345 MAX. 20.25 21.5 375 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi supply voltage RF input voltage single tone 132 channels flat Tstg Tmb storage temperature operating mounting base temperature PARAMETER     40 20 MIN.  70 45 +100 +100 dBmV dBmV C C MAX. 30 V UNIT 2001 Nov 01 2 www.DataSheet.in NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75  SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz f = 45 to 100 MHz f = 100 to 800 MHz f = 800 to 870 MHz flatness narrow band s11 input return losses in each 6 MHz segment f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s21 s12 CTB phase response reverse isolation composite triple beat f = 50 MHz RFout to RFin 79 chs; fm = 445.25 MHz; note 1 112 chs; fm = 649.25 MHz; note 2 132 chs; fm = 745.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz Xmod cross modulation 79 chs; fm = 55.25 MHz; note 1 112 chs; fm = 55.25 MHz; note 2 132 chs; fm = 55.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz CONDITIONS CGD914; CGD914MI MIN. 19.75 20.2 0.2 0.25 0.6 0.45  20 20 18 16 15 14 14 10 21 21 20 19 18 17 16 14 45              TYP. 20 21 1                                   MAX. 20.25 21.5 1.5 0.25 +0.4 +0.2 0.1                 +45 22 76 64 55 73 64 60 70 62 57 69 65 63 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dB dB dB dB dB dB dB dB dB 2001 Nov 01 3 www.DataSheet.in NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL PARAMETER CONDITIONS 79 chs; fm = 446.5 MHz; note 1 112 chs; fm = 746.5 MHz; note 2 132 chs; fm = 860.5 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz CSO Diff composite second order distortion (diff) 79 chs; fm = 150 MHz; note 1 112 chs; fm = 150 MHz; note 2 132 chs; fm = 150 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 150 MHz 112 chs flat; Vo = 44 dBmV; fm = 150 MHz 132 chs flat; Vo = 44 dBmV; fm = 150 MHz NF noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 870 MHz d2 second order distortion note 4 note 5 note 6 Vo output voltage dim = 60 dB; note 7 dim = 60 dB; note 8 dim = 60 dB; note 9 Itot Notes total current consumption (DC) note 10 CGD914; CGD914MI MIN.                    69 66 63 345 TYP.             2.5 2.5 2.6 3       360 MAX. 71 60 56 63 54 49 59 53 48 60 59 57 3 3 3.5 3.5 60 54 50    375 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dBmV dBmV mA CSO Sum composite second order distortion (sum) 1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz. 3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz). 4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz. 5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz. 6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq =.


C8051T605 CGD914MI CLC2000


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)