CY62136CV

CY62136CV30/33 MoBL CY62136CV MoBL 2M (128K x 16) Static RAM Features Very high speed: 55 ns and 70 ns Voltage range: — CY62136CV30: 2.7V–3.3V — CY62136CV33: 3.0V–3.6V — CY62136CV: 2.7V–3.6V Pin-compatible with the CY62136V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 5.5 mA @ f = fmax (70-ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power Packages offered in a 48-ball FBGA This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into t...