CY62136EV30

CY62136EV30 MoBL® 2-Mbit (128K x 16) Static RAM Features Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin-compatible with CY62136CV30 Ultra low standby power — Typical standby current: 1µA — Maximum standby current: 7µA Ultra-low active power — Typical active current: 2 mA @ f = 1 MHz Easy memory expansion with CE, and OE features Automatic power-down when deselected CMOS for optimum speed/power Offered in a Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description[1] The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written...