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CY7C1315CV18 Dataheets PDF



Part Number CY7C1315CV18
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Datasheet CY7C1315CV18 DatasheetCY7C1315CV18 Datasheet (PDF)

CY7C1311CV18, CY7C1911CV18 CY7C1313CV18, CY7C1315CV18 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Configurations CY7C1311CV18 – 2M x 8 CY7C1911CV18 – 2M x 9 CY7C1313CV18 – 1M x 18 CY7C1315CV18 – 512K x 36 Separate independent read and write data ports ❐ Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input c.

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CY7C1311CV18, CY7C1911CV18 CY7C1313CV18, CY7C1315CV18 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Configurations CY7C1311CV18 – 2M x 8 CY7C1911CV18 – 2M x 9 CY7C1313CV18 – 1M x 18 CY7C1315CV18 – 512K x 36 Separate independent read and write data ports ❐ Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches Echo clocks (CQ and CQ) simplify data capture in high-speed systems Single multiplexed address input bus latches address inputs for both read and write ports Separate port selects for depth expansion Synchronous internally self-timed writes QDR™-II operates with 1.5 cycle read latency when the Delay Lock Loop (DLL) is enabled Operates as a QDR-I device with 1 cycle read latency in DLL off mode Available in x 8, x 9, x 18, and x 36 configurations Full data coherency, providing most current data Core VDD = 1.8 (±0.1V); IO VDDQ = 1.4V to VDD Available in 165-Ball FBGA package (13 x 15 x 1.4 mm) Offered in both Pb-free and non Pb-free packages Variable drive HSTL output buffers JTAG 1149.1 compatible test access port Delay Lock Loop (DLL) for accurate data placement ■ ■ ■ ■ Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is accomplished through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. In order to maximize data throughput, both read and write ports are provided with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1311CV18) or 9-bit words (CY7C1911CV18) or 18-bit words (CY7C1313CV18) or 36-bit words (CY7C1315CV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Selection Guide 300 MHz Maximum Operating Frequency Maximum Operating Current x8 x9 x18 x36 300 765 800 840 985 278 MHz 278 720 730 760 910 250 MHz 250 665 675 705 830 200 MHz 200 560 570 590 675 167 MHz 167 495 490 505 570 Unit MHz mA Cypress Semiconductor Corporation Document Number: 001-07165 Rev. *C • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 26, 2007 [+] Feedback www.DataSheet.in CY7C1311CV18, CY7C1911CV18 CY7C1313CV18, CY7C1315CV18 Logic Block Diagram (CY7C1311CV18) D[7:0] 8 Write Reg Write Reg Write Reg Write Reg Read Add. Decode Write Add. Decode A(18:0) 19 Address Register Address Register 19 A(18:0) 512K x 8 Array 512K x 8 Array 512K x 8 Array 512K x 8 Array K K CLK Gen. RPS Control Logic C C CQ DOFF Read Data Reg. 32 VREF WPS NWS[1:0] Control Logic 16 16 Reg. Reg. Reg. 8 8 8 8 CQ 8 Q[7:0] Logic Block Diagram (CY7C1911CV18) D[8:0] 9 Write Reg Write Reg Write Reg Write Reg Read Add. Decode Write Add. Decode A(18:0) 19 Address Register Address Register 19 A(18:0) 512K x 9 Array 512K x 9 Array 512K x 9 Array 512K x 9 Array K K CLK Gen. RPS Control Logic C C CQ DOFF Read Data Reg. 36 VREF WPS BWS[0] Control Logic 18 18 Reg. Reg. Reg. 9 9 9 9 CQ 9 Q[8:0] Document Number: 001-07165 Rev. *C Page 2 of 31 www.DataSheet.in [+] Feedback CY7C1311CV18, CY7C1911CV18 CY7C1313CV18, CY7C1315CV18 Logic Block Diagram (CY7C1313CV18) D[17:0] 18 Write Reg Write Reg Write Reg Write Reg Read Add. Decode Write Add. Decode A(17:0) 18 Address Register Address Register 18 A(17:0) 256K x 18 Array 256K x 18 Array 256K x 18 Array 256K x 18 Array K K CLK Gen. RPS Control Logic C C CQ DOFF Read Data Reg. 72 VREF WPS BWS[1:0] Control Logic 3.


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