CY7C1486BV25

CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM Features ■ ■ ■ ■ ■ ■ Functional Description The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25[1] SRAM integrates 2M x 36/4M x 18/1M × 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) is active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self timed Write cycle. This part supports Byte Write operations (see “Pin Definitions” on page 7 and “Truth Table” on page 10 for further details). Write cycles can be one to two or four bytes wide, as controlled by the byte write control inputs. When it is active LOW, GW writes all bytes. Supports bus operation up to 250 MHz Available speed grades are 250, 200, and 167 MHz Registered inputs and outputs for pipelin...