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MBD330DWT1G

ON Semiconductor

(MBDxx0DWT1G) Dual Schottky Barrier Diodes

MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are mov...


ON Semiconductor

MBD330DWT1G

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Description
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The SOT−363 is ideal for low−power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons: SOT−363 Area (mm2) 4.6 120 2 SOT−23 7.6 225 1 http://onsemi.com Anode 1 N/C 2 Cathode 3 6 Cathode 5 N/C 4 Anode Max Package PD (mW) Device Count 1 SC−88 / SOT−363 CASE 419B STYLE 6 Space Savings: Package SOT−363 1  SOT−23 40% 2  SOT−23 70% The MBD110DW, MBD330DW, and MBD770DW devices are spin−offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT −23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features MARKING DIAGRAM 6 xx M G G 1 Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1G MBD330DWT1G MBD770DWT1G Symbol VR Value 7.0 30 70 120 − 55 to +125 − 55 to +150 Unit V = Device Code Refer to Ordering Table, page 2 M = Date Code G = Pb−Free Package (Note: Microdot may be in...




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