1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27UF081G2A HY27UF161G2A
This docume...
Description
HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27UF081G2A HY27UF161G2A
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Jun. 2007 1
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HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History
Revision No.
0.01 Initial Draft. 1) Change NOP 2) Change AC Characteristics 0.1
Before After tOH 12 10
History
Draft Date
Dec. 28. 2005
Remark
Preliminary
May. 18. 2006
Preliminary
1) Delete Memory array map 2) Change AC Characteristics
tCS tCEA 35 25 tREA 25 20
0.2
Before After
25 20
Oct. 02. 2006
Preliminary
3) Correct copy back function 1) Change 1Gb Package Type 0.3 - FBGA package is added - Figure & dimension are changed 2) Delet Preliminary 0.4 1) Correct figure 19 Jun. 11. 2007 Nov. 23. 2006
Rev 0.4 / Jun. 2007
2
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HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle: Manufacturer Code - 2nd cycle: Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3...
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