CY7C199D

CY7C199D 256-Kbit (32K × 8) Static RAM 256-Kbit (32K × 8) Static RAM Features ■ Temperature range ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA ■ 2.0 V data retention ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Easy memory expansion with CE and OE features ■ Available in Pb-free 28-pin 300-Mil-wide molded small outline J-lead package (SOJ) and 28-pin thin small outline package (TSOP) I packages Functional Description The CY7C199D is a high performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A14). Read from the device by taking chip enable (CE) and output enable (OE) LOW while forcing...