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FDP047N10

Fairchild Semiconductor

N-Channel MOSFET

FDP047N10 — N-Channel PowerTrench® MOSFET FDP047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 ...


Fairchild Semiconductor

FDP047N10

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Description
FDP047N10 — N-Channel PowerTrench® MOSFET FDP047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 Features RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP047N10 VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current - - - Continuous Continuous Continuous (TC (TC (TC = = = 25oC, 100oC, 25oC, Silicon Limited) Silicon Limited) Package Limited) 100 ±20 164* 116* 120 IDM EAS dv/dt PD Drain Current - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) 656* 1153 6.0 375 2.5 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temper...




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