N-Channel MOSFET
FDP047N10 — N-Channel PowerTrench® MOSFET
FDP047N10
N-Channel PowerTrench® MOSFET
100 V, 164 A, 4.7 mΩ
November 2013
...
Description
FDP047N10 — N-Channel PowerTrench® MOSFET
FDP047N10
N-Channel PowerTrench® MOSFET
100 V, 164 A, 4.7 mΩ
November 2013
Features
RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
FDP047N10
VDSS VGSS
ID
Drain to Source Voltage Gate to Source Voltage
Drain Current
-
-
-
Continuous Continuous Continuous
(TC (TC (TC
= = =
25oC, 100oC,
25oC,
Silicon Limited) Silicon Limited) Package Limited)
100 ±20 164* 116* 120
IDM EAS dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1) (Note 2) (Note 3)
656* 1153 6.0 375 2.5
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175 300
*Calculated continuous current based on maximum allowable junction temper...
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