N-Channel MOSFET. FDPF7N50F Datasheet

FDPF7N50F Datasheet PDF, Equivalent


Part Number

FDPF7N50F

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDPF7N50F Datasheet PDF


FDPF7N50F Datasheet
FDP7N50F / FDPF7N50F
N-Channel MOSFET, FRFET
500V, 6A, 1.15
Features
• RDS(on) = 0.95( Typ.)@ VGS = 10V, ID = 3A
• Low gate charge ( Typ. 15nC)
• Low Crss ( Typ. 6.3pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N50F FDPF7N50F
500
±30
6 6*
3.6 3.6*
24 24*
270
6
20
4.5
200 38.5
1.59 0.3
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDP7N50F
1.4
0.5
62.5
FDPF7N50F
4.0
-
62.5
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP7N50F / FDPF7N50F Rev. A
1
www.fairchildsemi.com
www.DataSheet.in

FDPF7N50F Datasheet
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP7N50F
Device
FDP7N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF7N50F
FDPF7N50F
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3A
VDS = 40V, ID = 3A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 6A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 6A
RG = 25
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 6A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 13mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.5
-
-
-
-
0.95
4.3
720
85
6.3
15
4.5
6
17
30
35
20
-
-
-
85
0.15
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
1.15
-S
960 pF
115 pF
10 pF
20 nC
- nC
- nC
45 ns
70 ns
80 ns
50 ns
6A
24 A
1.5 V
- ns
- µC
FDP7N50F / FDPF7N50F Rev. A
www.DataSheet.in
2 www.fairchildsemi.com


Features Datasheet pdf FDP7N50F / FDPF7N50F N-Channel MOSFET N ovember 2007 UniFETTM FDP7N50F / FDPF7 N50F N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gat e charge ( Typ. 15nC) • Low Crss ( Ty p. 6.3pF) • Fast switching • 100% a valanche tested • Improved dv/dt capa bility • RoHS compliant tm Descripti on These N-Channel enhancement mode pow er field effect transistors are produce d using Fairchild’s proprietary, plan ar stripe, DMOS technology. This advanc e technology has been especially tailor ed to minimize on-state resistance, pro vide superior switching performance, an d withstand high energy pulse in the av alanche and commutation mode. These dev ices are well suited for high efficient switching mode power supplies and acti ve power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF S eries S MOSFET Maximum Ratings TC = 2 5oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gat.
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