FDPF7N50F

FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007 UniFETTM FDP7N50F / FDPF7N50F N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A Low gate charge ( Typ. 15nC) Low Crss ( Typ. 6.3pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 200 1.59 -55 to +150 300 6 3.6 24 270 6 20 4.5 38.5 0.3 FDP7N50F 500 ±30 6* 3.6* 24* FDPF7N50F Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Tempera...