N-CHANNEL MOSFET
STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1
N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected Powe...
Description
STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1
N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP8NC70Z/FP STB8NC70Z/-1
s s
VDSS 700V 700V
RDS(on) < 1.2 Ω < 1.2 Ω
ID 6.8 A 6.8 A
1 3
s s s
TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D2PAK
1
3 2
TO-220
TO-220FP
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
s
12
3
I2PAK
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
.(*)Pulse
Value STP(B)8NC70Z(-1) 700 700 ± 25 6.8 4.3 27 135 1.08...
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