STF9NM50N

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1 3 2 2 1 7.5A 7.5A 7.5A(1) 3 1 IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram Applications ■ Switching application Order codes s b O t e l o r P e u d o ) s ( ct o s b O - e t le o r P c u d TO-220FP ) s t( 3 1 2 Part number Marking D9NM50N D9NM50N P9NM50N F9NM50N Package IPAK DPAK TO-220 TO-220FP Packaging Tube Tape & reel Tube Tube STD9NM50N-1 STD9NM50N STP9NM50N STF9NM50N 10 April 2007 Rev 1 1/17 www.st.com 17 www.DataSheet.in Contents STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2....