ST 2SC1740
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings
(Ta = 25? ) Symbol Value 60 50 5 150 300 150 -55 to +150 Unit V V V mA mW
O O
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC Ptot Tj TS
C C
G S P FORM A IS AVAILABLE
РАДИОТЕХ-ТРЕЙД
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ST 2SC1740
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Q R S E Collector Base Breakdown Voltage at IC=50µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50µA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz COB 2 3.5 pF fT 180 MHz VCE(sat) 0.4 V IEBO 0.1 µA ICBO 0.1 µA V(BR)EBO 5 V V(BR)CEO 50 V V(BR)CBO 60 V hFE hFE hFE hFE 120 180 270 390 270 390 560 820 Min. Typ. Max. Unit
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
®
www.DataSheet.in
(Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
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