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PNP Transistor. 2SA0879 Datasheet

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PNP Transistor. 2SA0879 Datasheet
















2SA0879 Transistor. Datasheet pdf. Equivalent













Part

2SA0879

Description

Silicon PNP Transistor



Feature


Transistors 2SA0879 (2SA879) Silicon PN P epitaxial planar type For general amp lification Complementary to 2SC1573 ■ Features • High collector-emitter vo ltage (Base open) VCEO 0.7+0.3 –0.2 0 .7±0.1 Unit: mm 5.9±0.2 4.9±0.2 Absolute Maximum Ratings Ta = 25°C P arameter Collector-base voltage (Emitte r open) Collector-emitter voltage (Base open) Emitter-base voltage (C.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SA0879 Datasheet


Panasonic Semiconductor 2SA0879

2SA0879; ollector open) Collector current Peak co llector current Collector power dissipa tion Junction temperature Storage tempe rature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C 1 2 3 0.45+0.2 –0.1 ( 1.27) 13.5±0.5 0.45+0.2 –0.1 (1.27) 8.6±0.2 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L.


Panasonic Semiconductor 2SA0879

-A1 Package ■ Electrical Characterist ics Ta = 25°C ± 3°C Parameter Collec tor-emitter voltage (Base open) Emitter -base voltage (Collector open) Forward current transfer ratio * Collector-emit ter saturation voltage Transition frequ ency Collector output capacitance (Comm on base, input open circuited) Symbol V CEO VEBO hFE VCE(sat) fT Cob Conditions IC = −100 µA, IB = 0 I.


Panasonic Semiconductor 2SA0879

E = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −50 mA, IB = −5 mA VC B = −10 V, IE = 10 mA, f = 200 MHz VC B = −10 V, IE = 0, f = 1 MHz 50 80 5 10 Min −200 −5 60 220 −1.5 Typ Ma x Unit V V  V MHz pF Note) 1. Measu ring methods are based on JAPANESE INDU STRIAL STANDARD JIS C 7030 measuring me thods for transistors. 2. *: Rank class ification Rank hFE Q 60 to 150 R 100 to 2.





Part

2SA0879

Description

Silicon PNP Transistor



Feature


Transistors 2SA0879 (2SA879) Silicon PN P epitaxial planar type For general amp lification Complementary to 2SC1573 ■ Features • High collector-emitter vo ltage (Base open) VCEO 0.7+0.3 –0.2 0 .7±0.1 Unit: mm 5.9±0.2 4.9±0.2 Absolute Maximum Ratings Ta = 25°C P arameter Collector-base voltage (Emitte r open) Collector-emitter voltage (Base open) Emitter-base voltage (C.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SA0879 Datasheet




 2SA0879
Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
Features
High collector-emitter voltage (Base open) VCEO
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
250
200
5
70
100
1
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1 : Emitter
123
2 : Collector
3 : Base
2.54±0.15
EIAJ : SC-51
TO-92L-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
200
V
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 5 V
Forward current transfer ratio *
hFE VCE = −10 V, IC = −5 mA
60 220
Collector-emitter saturation voltage
VCE(sat) IC = −50 mA, IB = −5 mA
1.5 V
Transition frequency
fT VCB = −10 V, IE = 10 mA, f = 200 MHz 50 80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
5 10 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 150
100 to 220
Publication date: November 2002
www.DataSheet.in
Note) The part number in the parenthesis shows conventional part number.
SJC00006BED
1




 2SA0879
2SA0879
PC Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
120
100
80
60
40
20
IC VCE
Ta = 25°C
IB = −2 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
120
100
IC IB
VCE = −10 V
Ta = 25°C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base current IB (mA)
IB VBE
2.4
VCE = −10 V
Ta = 25°C
2.0
1.6
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
120
100
IC VBE
VCE = −10 V
25°C
Ta = 75°C
25°C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
0.1
25°C
Ta = 75°C
25°C
0.01
0.1
1
10 100
Collector current IC (mA)
hFE IC
300
VCE = −10 V
250
200
Ta = 75°C
150
25°C
100 25°C
50
0
0.1
1
10 100
Collector current IC (mA)
fT IE
160
VCB = −10 V
140 f = 100 MHz
Ta = 25°C
120
100
80
60
40
20
0
0.1 1 10 100
Emitter current IE (mA)
Cob VCB
16
f = 1 MHz
14 IE = 0
Ta = 25°C
12
10
8
6
4
2
0
1 10 100
Collector-base voltage VCB (V)
2
www.DataSheet.in
SJC00006BED




 2SA0879
10 000
1 000
100
IEBO Ta
VEB = −5 V
2SA0879
ICBO Ta
Safe operation area
10 000
VCB = −250 V
1 000
Single pulse
Ta = 25°C
1 000 100 ICP
IC t = 10 ms
t=1s
100 10
10 10 1
1
0 40 80 120 160 200
Ambient temperature Ta (°C)
1
0 40 80 120 160 200
Ambient temperature Ta (°C)
0.1
1
10
100
1 000
Collector-emitter voltage VCE (V)
www.DataSheet.in
SJC00006BED
3




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