SBR13003B1

SBR13003B1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP = 5ms 1.5 25 1.14 - 40 ~ 150 - 40 ~ 150 Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 3.12 89 Units ℃/W ℃/W Jan 2009. Rev. 1 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 www.DataSheet.in SBR13003B1 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol VCEO(sus) Value Parameter Test Conditions Min 400 Typ Max 0.3 0.5 1.0 1.0 1.2 1.0 5.0 30 25 Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A VCE(sat) Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A V VBE(sat) Base-Emitter Satura...