STK13003

STK13003 High voltage fast-switching NPN power transistor Features ■ STK13003 is reverse pin out versus standard SOT-82 package ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting (CFL) ■ SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SOT-82 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STK13003 K13003 July 2008 Package SOT-82 Rev 4 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature STK13003 Value 700 400 V(BR)EBO 1.5 3 0.75 1.5 40 -55 to 150 150 Unit V V V A A A A W °C °C 2/10 STK13003 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 3. Electrical character...