MA112

Switching Diodes MA2J112 (MA112) Silicon epitaxial planar type Unit : mm For switching circuits I Features Small S-mini type package, allowing high-density mounting Ensuring the average forward current capacity IF(AV) = 200 mA 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 0.16+0.1 –0.06 5° Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 600 1 150 −55 to +150 Unit 0 to 0.1 V V mA mA A °C °C Peak forward current Non-repetitive peak forward surge current*2 Junction temperature Storage temperature 1 : Anode 2 : Cathode SMini2-F1 Package Marking Symbol: 1C Note) *1 : With a printed-circuit board *2 : t = 1 s I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr VR = 15 V VR = 35 V VR = 35 V, Ta = 100°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Conditions Min Typ Max 50 500 100 1.1 4 10 Unit nA nA µA V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Note) The part number in the parenthesis shows conventional part number. (0.15) 0.4±0.1 I Absolute Maximum Rat...